Analysis and modeling for MOSFET degradation under RF stress-Reference-Cited by-同舟云学术

Analysis and modeling for MOSFET degradation under RF stress

Published:2021-04-25 Issue:8 Volume:18 Page:20210116-20210116
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Fu Haipeng¹,Yang Liping¹,Niu Muqian¹,Li Xuguang¹,Ma Kaixue¹

Affiliation:

1. School of Microelectronics, Tianjin University, and also with Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/18/8/18_18.20210116/_pdf

Reference31 articles.

1. [1] E. Xiao, et al.: “CMOS RF and DC reliability subject to hot carrier stress and oxide soft breakdown,” IEEE Trans. Device Mater. Rel. 4 (2004) 92 (DOI: 10.1109/TDMR.2004.824365).

2. [2] S. Naseh, et al.: “Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers,” IEEE Trans. Device Mater. Rel. 5 (2005) 501 (DOI: 10.1109/TDMR.2005.853502).

3. [3] C. Yu, et al.: “Voltage stress-induced performance degradation in NMOSFET mixer,” IEICE Electron. Express 2 (2005) 133 (DOI: 10.1587/elex.2.133).

4. [4] T. Matsuda, et al.: “A test structure for reliability analysis of CMOS devices under DC and high frequency AC stress,” Proc. International Conference on Microelectronic Test Structures (2015) 86 (DOI: 10.1109/ICMTS.2015.7106114).

5. [5] S. Naseh, et al.: “Effects of hot-carrier stress on the performance of the LC-tank CMOS oscillators,” IEEE Trans. Electron Devices 50 (2003) 1334 (DOI: 10.1109/TED.2003.813241).

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