A fully integrated GaAs HBT power amplifier with enhanced efficiency for 5-GHz WLAN applications
Author:
Affiliation:
1. Institute of Microelectronics, University of Chinese Academy of Sciences
2. Smart Sensing R&D Centre, Institute of Microelectronics of Chinese Academy of Science
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/19/12/19_19.20220157/_pdf
Reference30 articles.
1. [1] B.P. Crow, et al.: “IEEE 802.11 wireless local area networks,” IEEE Commun. Mag. 35 (1997) 116 (DOI: 10.1109/35.620533).
2. [2] G.R. Hiertz, et al.: “IEEE 802.11s: the WLAN mesh standard,” IEEE Wireless Commun. 17 (2010) 104 (DOI: 10.1109/MWC.2010.5416357).
3. [3] S. Baek, et al.: “A 5.5-GHz CMOS power amplifier using parallel-combined transistors with cascode adaptive biasing for WLAN applications,” IEICE Electron. Express 15 (2018) 20180336 (DOI: 10.1587/elex.15.20180336).
4. [4] M.S. Gast: 802.11ac: A Survival Guide: Wi-Fi at Gigabit and Beyond(O’Reilly Media, 2013).
5. [5] E.H. Ong, et al.: “IEEE 802.11ac: enhancements for very high throughput WLANs,” 2011 IEEE 22nd International Symposium on Personal, Indoor and Mobile Radio Communications (2011) (DOI: 10.1109/PIMRC.2011.6140087).
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