A wideband high efficiency V-band 65 nm CMOS power amplifier with neutralization and harmonic controlling

Author:

Chen Dong1,Jiang Zhengdong1,Zhao Chenxi1,Liu Ying1,Man Shum Kam2,Xue Quan2,Kang Kai1

Affiliation:

1. School of Electronic Engnieering, University of Electronic Science and Technology of China

2. State Key Laboratory of Millimeter Waves, Department of Electronic Engineering, City University of Hong Kong

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. [1] K. Kanget al.: “A 60-GHz OOK receiver with an on-chip antenna in 90 nm CMOS,” IEEE J. Solid-State Circuits 45 (2010) 1720 (DOI: 10.1109/JSSC.2010.2053095).

2. [2] D. Chen, et al.: “A V-band inverse class F power amplifier with 16.3% PAE in 65 nm CMOS,” IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT) (2016) 55 (DOI: 10.1109/ICMMT.2016.7761675).

3. [3] W. L. Chan and J. R. Long: “A 58–65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply,” IEEE J. Solid-State Circuits 45 (2010) 554 (DOI: 10.1109/JSSC.2009.2039274).

4. [4] S. Y. Mortazavi and K.-J. Koh: “A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS,” Radio Frequency Integrated Circuits Symposium (2015) 211 (DOI: 10.1109/RFIC.2015.7337742).

5. [5] S. Y. Mortazavi and K.-J. Koh: “A 43% PAE inverse class-F power amplifier at 39–42 GHz with a λ/4-transformer based harmonic filter in 0.13-µm SiGe BiCMOS,” IEEE International Microwave Symposium (2016) (DOI: 10.1109/MWSYM.2016.7540383).

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