A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT-Reference-Cited by-同舟云学术

A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT

Published:2017 Issue:16 Volume:14 Page:20170684-20170684
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Li Xiao¹,Zhang Yong¹,Zhang Tiedi¹,Lu Haiyan²,Cheng Wei²,Xu Ruimin¹

Affiliation:

1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China

2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/14/16/14_14.20170684/_pdf

Reference13 articles.

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2. [2] H.-J. Songet al.: “Present and future of terahertz communications,” IEEE Trans. THz Sci. Technol. 1 (2011) 256 (DOI: 10.1109/TTHZ.2011.2159552).

3. [3] Z. Xuet al.: “A 100–117 GHz W-band CMOS power amplifier with on-chip adaptive biasing,” IEEE Microw. Wireless Compon. Lett. 21 (2011) 547 (DOI: 10.1109/LMWC.2011.2163815).

4. [4] N. Sarmahet al.: “160-GHz power amplifier design in advanced SiGe HBT technologies with Psat in excess of 10 dBm,” IEEE Trans. Microw. Theory Techn. 61 (2013) 939 (DOI: 10.1109/TMTT.2012.2231875).

5. [5] R. B. Yishay, et al.: “A 17.8 dBm 110–130 GHz power amplifier and doubler chain in SiGe BiCMOS technology,” IEEE Radio Freq. Integr. Circuits Symp. Dig. (2015) 391 (DOI: 10.1109/RFIC.2015.7337787).

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1. A terahertz on-chip InP-based power combiner designed using coupled-grounded coplanar waveguide lines*;Chinese Physics B;2021-12-01

2. A 220-GHz InP DHBT Power Amplifier With Integrated Planar Spatial Power Combiner;IEEE Microwave and Wireless Components Letters;2019-03