RESET failure analysis of phase change memory based on Ge2Sb2Te5-Reference-Cited by-同舟云学术

RESET failure analysis of phase change memory based on Ge₂Sb₂Te₅

Published:2017 Issue:17 Volume:14 Page:20170673-20170673
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Wang Yuchan¹,Wang Yuhan²,Chen Xiaogang³,Li Xiaoyun³

Affiliation:

1. School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications

2. School of Electrical and Electronic Engineering, Chongqing University of Technology

3. State Key Laboratory of Functional Materials for Informatics and Nanotechnology Laboratory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/14/17/14_14.20170673/_pdf

Reference14 articles.

1. [1] S. Lai, “Current status of the phase change memory and its future,” IEEE IEDM Tech. Dig. (2003) 10.1.1 (DOI: 10.1109/IEDM.2003.1269271).

2. [2] M. Wuttig and N. Yamada: “Phase-change materials for rewriteable data storage,” Nat. Mater. 6 (2007) 824 (DOI: 10.1038/nmat2009).

3. [3] R. Bez: “Chalcogenide PCM: A memory technology for next decade,” IEEE IEDM Tech. Dig. (2010) 1 (DOI: 10.1109/IEDM.2009.5424415).

4. [4] J. B. Parket al.: “Phase-change behavior of stoichiometric Ge₂Sb₂Te₅ in phase-change random access memory,” J. Electrochem. Soc. 154 (2007) H139 (DOI: 10.1149/1.2409482).

5. [5] S. M. Yoonet al.: “Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge₂Sb₂Te₅ chalcogenide thin films,” Appl. Surf. Sci. 254 (2007) 316 (DOI: 10.1016/j.apsusc.2007.07.098).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses;Science China Information Sciences;2024-04-19

2. Blade-type phase-change random access memory technology, challenge and prospect;IEICE Electronics Express;2023-10-10

3. Segregation-induced Ge precipitation in Ge₂Sb₂Te₅ and N-doped Ge₂Sb₂Te₅ line cells;AIP Advances;2022-06-01

4. Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays;Microelectronics Reliability;2021-11