An electron injection enhanced bi-mode MOS controlled thyristor to suppress the snapback phenomenon
Author:
Affiliation:
1. School of Automation and Information Engineering, Xi’an University of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/21/12/21_21.20240205/_pdf
Reference33 articles.
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2. [2] M. Mehrotra and B.J. Baliga: “The dual-gate MOS controlled thyristor with current saturation capability,” ISPSD (1996) 133 (DOI: 10.1109/ISPSD.1996.509465).
3. [3] B. You, et al.: “High channel density dual operation mode MOS-controlled thyristor with superior current saturation capability,” IEEE Electron Device Lett. 21 (2000) 463 (DOI: 10.1109/55.863113).
4. [4] I.V. Grekhov, et al.: “Switching characteristics of an MOSFET-controlled high-power integrated thyristor,” Solid-State Electronics 51 (2006) 609 (DOI: 10.1134/S1063784206050112).
5. [5] L. Li, et al.: “A study on ionization damage effects of anode-short MOS-controlled thyristor,” IEEE Trans. Nucl. Sci. 67 (2020) 2062 (DOI: 10.1109/TNS.2020.3012766).
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