Compiler-assisted Data Placement for Heterogeneous Memory Systems
Author:
Affiliation:
1. Department of Smart ICT Convergence Engineering, Seoul National University of Science and Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_21.20240460/_pdf
Reference34 articles.
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2. [2] K. Wu, Y. Huang, and D. Li, “Unimem: Runtime Data Managementon Non-volatile Memory-based Heterogeneous Main Memory,” in Proceedings of the International Conference for High Performance Computing, Networking, Storage and Analysis, 2017.
3. [3] B. C. Lee, P. Zhou, J. Yang, Y. Zhang, B. Zhao, E. Ipek, O. Mutlu, and D. Burger, “Phase-change technology and the future of main memory,” IEEE Micro, 2010.
4. [4] S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y. C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S. H. Chen, H. L. Lung, and C. H. Lam, “Phase-change random access memory: Ascalable technology,” IBM Journal of Research and Development, 2008.
5. [5] H.-S. P. Wong, S. Raoux, S. Kim, J. Liang, J. P. Reifenberg, B. Rajendran, M. Asheghi, and K. E. Goodson, “Phase change memory,” Proceedings of the IEEE, vol. 98, no. 12, pp. 2201-2227, 2010.
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