A CMOS 4.6ppm/°C curvature-compensated bandgap voltage reference-Reference-Cited by-同舟云学术

A CMOS 4.6ppm/°C curvature-compensated bandgap voltage reference

Published:2012 Issue:20 Volume:9 Page:1617-1623
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Liu Shubin¹,Zhu Zhangming¹,Gu Huaxi²,Liu Minjie¹,Liu Lianxi¹,Yang Yintang¹

Affiliation:

1. School of Microelectronics, Xidian University

2. School of Telecommunications Engineering, Xidian University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/9/20/9_1617/_pdf

Reference6 articles.

1. [1] A.-J. Annema and G. Goksun, “A 0.0025mm2 Bandgap Voltage Reference for 1.1V Supply in Standard 0.16µm CMOS,” IEEE Int. Solid-State Circuits Conference, pp. 364-366, 2012.

2. A 300 nW, 15 ppm/$^{\circ}$C, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs

3. [3] D. Colombo, F. Werle, G. Wirth, and S. Bampi, “A CMOS 25.3ppm/°C Bandgap Voltage Reference using Self-Cascode Composite Transistor,” IEEE Third Latin American Symposium on Circuits and Systems (LASCAS), pp. 1-4, 2012.

4. A CMOS bandgap reference without resistors

5. [5] Z.-K. Zhou, Y. Shi, Z. Huang, P.-S. Zhu, Y.-Q. Ma, Y.-C. Wang, Z. Chen, X. Ming, and B. Zhang, “A 1.6V 25-µA 5-ppm/°C Curvature-Compensated Bandgap Reference,” IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 59, no. 4, pp. 677-684, 2012.

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3. An Improved Bandgap Reference with Curvature-Compensated and High Power Supply Rejection;Journal of Circuits, Systems and Computers;2016-08-14