High receiver responsivity and low dark current of InP-based pin-photodiode array monolithically integrated with 90° hybrid and spot-size converter using selective embedding regrowth

Author:

Yagi Hideki1,Inoue Naoko1,Kikuchi Takehiko1,Masuyama Ryuji1,Katsuyama Tomokazu1,Tateiwa Yoshihiro1,Uesaka Katsumi1,Yoneda Yoshihiro1,Takechi Masaru1,Shoji Hajime1

Affiliation:

1. Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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2. [2] R. Noe: J. Lightwave Technol. 23 (2005) 802. DOI:10.1109/JLT.2004.838818

3. [3] G. Charlet, J. Renaudier, H. Mardoyan, P. Tran, O. Bertran Pardo, F. Verluise, M. Achouche, A. Boutin, F. Blache, J.-Y. Dupuy and S. Bigo: Proc. OFC/NFOEC 2008 (2008) paper PDP3.

4. [4] S. Oda, T. Tanimura, T. Hoshida, C. Ohshima, H. Nakashima, Z. Tao and J. C. Rasmussen: Proc. OFC/NFOEC 2009 (2009) paper OThR6.

5. [5] H.-G. Bach, A. Matiss, C. C. Leonhardt, R. Kunkel, D. Schmidt, M. Schell and A. Umbach: Proc. OFC/NFOEC 2009 (2009) paper OMK5.

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