A novel gate driving scheme for high power PWM and bypass switches

Author:

Lee Dong-Myung1,Keister Thomas L.2,Seo Jae-Hyeong3,Habetler Thomas G.4,Harley Ronald G.4,Rostron Joseph R.5

Affiliation:

1. School of Electronic and Electrical Engineering, Hongik University

2. JSL, Inc.

3. MEMS Research and Innovation Center, Qualcomm MEMS Technology

4. School of Electrical and Computer Engineering, Georgia Institute of Technology

5. Southern States LLC

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. [1] S. Castagno, R. D. Curry, and E. Loree, “Analysis and comparison of a fast turn-on series IGBT stack and high-voltage-rated commercial IGBTs,” IEEE Trans. Plasma Sci., vol. 34, no. 5, pp. 1692-1696, Oct 2006.

2. Active Voltage Control of IGBTs for High Power Applications

3. [3] T. Jalakas, D. Vinnikov, and J. Laugis, “Development of 50-kW isolated DC/DC converter with high voltage IGBTs,” Compatibility in Power Electron., pp. 1-6, May 2007.

4. [4] S. Park and T. M. Jahns, “A self-boost charge pump topology for a gated drive high-side power supply,” Conf. Rec. IEEE APEC, pp. 126-131, 2003.

5. [5] B. K. Bose, Power Electronics and AC drives, Prentice-Hall, New Jersey, 1986.

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