Degradation Analysis of Semiconductor Optical Devices and Suppression of Degradation
Author:
Affiliation:
1. Graduate School of Engineering, Kanazawa Institute of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
General Earth and Planetary Sciences,General Environmental Science
Link
https://www.jstage.jst.go.jp/article/essfr/6/4/6_294/_pdf
Reference25 articles.
1. (1)I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, “Junction lasers which operate continuously at room temperature,”Appl. Phys. Lett., vol.17, no.3, pp.109-111, Aug. 1970.
2. (2)M. Ikeda,O. Ueda, S. Komiya, and I Umebu,“Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser,”J. Appl. Phys., vol.58,no.7, pp.2448-2452, Oct. 1985.
3. (3)S. Guha, J. M. DePuydt, M. A. Haase, J. Qui, and H. Cheng, “Degradation of II-VI based blue-green light emitters,”Appl. Phys. Lett. , vol.63, no.23, pp.3107-3109, Dec. 1993.
4. (4)S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, “InGaN-based multi-quantum-well-structure laser diodes,”Jpn. J. Appl. Phys., vol.35, Part2, no.1B, pp.L74-L76, Jan. 1996.
5. (5)O. Ueda, “Degradation of III-V opto-electronic devices,”J. Electrochem. Soc., vol.135, no.1, pp.11C-22C, Jan. 1988.
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