Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain-Reference-Cited by-同舟云学术

Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain

Published:2007 Issue:14 Volume:4 Page:442-447
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Matsuo Naoto¹,Fukushima Atsushi¹,Ohkura Kensaku²,Heya Akira¹,Yokoyama Shin²

Affiliation:

1. Department of Materials Science & Chemistry, University of Hyogo

2. Research Center for Nanodevices and Systems, Hiroshima University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/4/14/4_14_442/_pdf

Reference7 articles.

1. [1] H. Hamada, H. Abe, and Y. Miyai, “Development of High-Performance Poly-Si TFTs and Improvement of Image Characteristics for High-Definition LCD Light-Valves, ” IEICE Trans. Electron. (Japanese Edition), vol. J84-C, no. 2, pp. 65-75, Feb. 2001.

2. [2] T. Noguchi, J. Y. Kwon, J. S. Jung, J. M. Kim, K. B. Park, H. Lim, D. Y. Kim, H. S. Cho, X. X. Zhang, H. X. Yin, and W. X. Xianyu, “Low Temperature Process for Advanced Si TFT Technology, ” Dig. Intern. Workshop on Active-Matrix Liquid-Crystal Displays, Kanazawa, Japan, TFT1-1, pp. 281-284, July 2005.

3. [3] N. Sasaki, A. Hara, F. Takeuchi, K. Suga, M. Takei, K. Yoshino, and M. Senda, “A New Low-Temperature Poly-Si TFT Technology Realizing Mobility above 500cm²/Vs by Using CW Laser Lateral Crystallization (CLC), ” IEICE Trans. Electron. (Japanese Edition), vol. J85-C, no. 8, pp. 601-608, Aug. 2002.

4. [4] H. Watakabe, Y. Tsunoda, T. Sameshima, and M. Kimura, “Characterization of Polycrystalline Silicon Thin Film Transistor, ” Dig. Intern. Workshop on Active-Matrix Liquid-Crystal Displays, Kanazawa, Japan, TFT1-3, pp. 45-48, July 2001.

5. [5] N. Matsuo, H. Kihara, A. Yamamoto, N. Kawamoto, and H. Hamada, “Proposal and Examination of New Type of TFT with Tunneling Dielectric Film at Both Ends of Channel Fabrication Area, ” IEICE Trans. Electron. (Japanese Edition), vol. J86-C, no. 10, pp. 1070-1078, Oct. 2003.

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