Selective Growth of Self-Assembling Si and SiGe Quantum Dots-Reference-Cited by-同舟云学术

Selective Growth of Self-Assembling Si and SiGe Quantum Dots

Published:2014 Issue:5 Volume:E97.C Page:393-396
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

MAKIHARA Katsunori¹,IKEDA Mitsuhisa²,MIYAZAKI Seiichi¹

Affiliation:

1. Graduate School of Engineering, Nagoya University

2. Graduate School of Advanced Sciences of Matter, Hiroshima University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E97.C/5/E97.C_393/_pdf

Reference16 articles.

1. [1] S. Tiwari, F. Rana, H. Hanafi, H. Hartstein, E.F. Crabbe, and K. Chan, “A silicon nanocrystals based memory,” Appl. Phys. Lett., vol.68, pp.1377-1379, 1996.

2. [2] L. Guo, E. Leobandung, and S.Y. Chou, “A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel,” Appl. Phys. Lett., vol.70, pp.850-852, 1997.

3. [3] Y. Ono, K. Yamazaki, M. Nagase, S. Horiguchi, K. Shiraishi, Y. Takahashi, K. Murase, and K. Kurihara, “Single-electron and quantum SOI devices,” Microelectronic Eng., vol.59, pp.435-442, 2001.

4. [4] M. Ikeda, Y. Shimizu, H. Murakami, and S. Miyazaki, “Multiple-step electron charging in silicon-quantum-dot floating gate metal-oxide-semiconductor memories,” Jpn. J. Appl. Phys., vol.42, pp.4143-4137, 2003.

5. [5] R. Nuryadi, Y. Ishikawa, and M. Tabe, “Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array,” Phys. Rev. B, vol.73, 045310, 2006.