Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence-Reference-Cited by-同舟云学术

Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence

Published:2014 Issue:5 Volume:E97.C Page:409-412
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

OKADA Hiroshi¹,OKADA Yuki²,SEKIGUCHI Hiroto²,WAKAHARA Akihiro²,SATO Shin-ichiro³,OHSHIMA Takeshi³

Affiliation:

1. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology

2. Department of Electrical and Electronics Information Engineering, Toyohashi University of Technology

3. Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA)

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E97.C/5/E97.C_409/_pdf

Reference12 articles.

1. [1] A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H.J. von Bardeleben, J.-L. Cantin, and S. Raymond, “Radiation hardness of Gallium Nitride,” IEEE Trans. Nucl. Sci., vol.49, no.6, pp.2733-2738, 2002.

2. [2] S. Gonda, H. Tsutsumi, Y. Ito, T. Mukai, and S. Nagahama, “Proton radiation effects in nitride lasers and light emitting diodes,” Phys. Stat. Sol. (A), vol.204, no.1, pp.231-235, 2007.

3. [3] F. Gaudreau, C. Carlone, A. Houdayer, and S.M. Khanna, “Spectral properties of proton irradiated gallium nitride blue diodes,” IEEE Trans. Nucl. Sci., vol.48, no.6, pp.1778-1784, 2001.

4. [4] S.M. Khanna, D. Estan, A. Houdayer, H.C. Liu, and R. Dudek, “Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes,” IEEE Trans. Nucl. Sci., vol.51, no.6, pp.3585-3594, 2004.

5. [5] F.D. Auret, S.A. Goodman, F.K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, “Proton bombardment-induced electron traps in epitaxially grown n-GaN,” Appl. Phys. Lett., vol.74, no.3, pp.407-409, 1999.

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