Development of Superconducting Devices Supporting Radio Astronomy-Reference-Cited by-同舟云学术

Development of Superconducting Devices Supporting Radio Astronomy

Published:2021-09-01 Issue:9 Volume:E104.C Page:411-421
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

UZAWA Yoshinori¹,KROUG Matthias²,KOJIMA Takafumi¹,TAKEDA Masanori³,MAKISE Kazumasa⁴,EZAKI Shohei¹,SHAN Wenlei¹,MIYACHI Akihira¹,FUJII Yasunori¹,TERAI Hirotaka⁵

Affiliation:

1. NAOJ

2. UBC

3. Shizuoka Univ.

4. AIST

5. NICT

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E104.C/9/E104.C_2020SUI0003/_pdf

Reference65 articles.

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2. [2] T. Mimura, “Development of High Electron Mobility Transistor,” Jpn. J. Appl. Phys., vol.44, no.12, pp.8263-8268, 2005. 10.1143/jjap.44.8263

3. [3] J.M. Rowell, M. Gurvitch, and J. Geerk, “Modification of tunneling barriers on Nb by a few monolayers of Al,” Phys. Rev. B, vol.24, no.4, pp.2278-2281, 1981. 10.1103/physrevb.24.2278

4. [4] M. Gurvitch, M.A. Washington, and H.A. Huggins, “High quality refractory Josephson tunnel junctions utilizing thin aluminum layers,” Appl. Phys. Lett., vol.42, no.5, pp.472474, 1983. 10.1063/1.93974

5. [5] M. Gurvitch, M.A. Washington, H.A. Huggins, and J.M. Rowell, “Preparation and Properties of Nb Josephson Junctions with Thin Al layers,” IEEE Trans. Magn., vol.MAG-19, no.3, pp.791-794, 1983. 10.1109/tmag.1983.1062296

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