Reduced Peripheral Leakage Current in Pin Photodetectors of Ge on n<sup>+</sup>-Si by P<sup>+</sup> Implantation to Compensate Surface Holes
Author:
Affiliation:
1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/transele/E107.C/9/E107.C_2023FUS0001/_pdf
Reference17 articles.
1. [1] J. Michel, J. Liu, and L.C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photon., vol.4, no.8, pp.527-534, Aug. 2010. 10.1038/nphoton.2010.157
2. [2] D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L.C. Kimerling, and J. Michel, “High performance, waveguide integrated Ge photodetectors,” Opt. Express, vol.15, no.7, pp.3916-3921, April 2007. 10.1364/OE.15.003916
3. [3] T. Yin, R. Cohen, M.M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M.J. Paniccia, “31GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate,” Opt. Express, vol.15, no.21, pp.13965-13971, Oct. 2007. 10.1364/oe.15.013965
4. [4] L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express, vol.17, no.8, pp.6252-6257, April 2009. 10.1364/oe.17.006252
5. [5] K.-W. Ang, T.-Y. Liow, M.-B. Yu, Q. Fang, J. Song, G.-Q. Lo, and D.-L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Select. Topics Quantum Electron., vol.16, no.1, pp.106-113, Jan./Feb. 2010. 10.1109/jstqe.2009.2025142
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