1. SoC Emerging Technologies
2. [2] H.K. Nguyen, M.H. Hu, N. Nishiyama, N.J. Visovsky, Y. Li, K. Song, X. Liu, J. Gollier, L.C. Hughes, Jr., R. Bhat, and C.E. Zah, “107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode, ” IEEE Photonics Technol. Lett., vol.18, no.5, pp.682-684, March 2006.
3. [3] M. Ruiz, H. Odriozola, C.H. Kwok, N. Michel, M. Calligaro, M. Lecomte, O. Parillaud, M. Krakowski, J.M.G. Tijero, I. Esquivias, R.V. Penty, and I.H. White, “High-brightness tapered lasers with an Al-free active region at 1060nm, ” Proc. SPIE, vol.7230, pp.72301D-72301D8, 2009.
4. [4] C.T. Wan, Y.K. Su, H.C. Yu, C.Y. Huang, W.H. Lin, W.C. Chen, H.C. Tseng, J.B. Horng, C. Hu, and S. Tsau, “Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP-GaAs superlattice as strain-compensated layer, ” IEEE Photonics Technol. Lett., vol.21, no.19, pp.1474-1476, Oct. 2009.
5. [5] C.H. Lin, Y.K. Su, Y.Z. Juang, R.W. Chuang, S.J. Chang, J.F. Chen, and C.H. Tu, “The effect of geometry on the noise characterization of SiGe HBTs and optimized device sizes for the design of low-noise amplifiers, ” IEEE Trans. Microw. Theory Tech., vol.52, no.9, pp.2153-2162, Sept. 2004.