Oxide Thin Film Transistor Circuits for Transparent RFID Applications-Reference-Cited by-同舟云学术

Oxide Thin Film Transistor Circuits for Transparent RFID Applications

Published:2010 Issue:10 Volume:E93-C Page:1504-1510
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

CHO Seung Hyun¹,KIM Sang Woo¹,CHEONG Woo Seok²,BYUN Chun Won²,HWANG Chi-Sun²,CHO Kyoung Ik²,BAE Byung Seong¹

Affiliation:

1. Hoseo University

2. ETRI

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E93.C/10/E93.C_10_1504/_pdf

Reference12 articles.

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3. A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators

4. Pentacene-based radio-frequency identification circuitry

5. A 13.56-MHz RFID System Based on Organic Transponders

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2. Manchester‐encoded data transmission circuit integrated by metal–oxide TFTs suitable for 13.56 MHz radio‐frequency identification tag application;IET Circuits, Devices & Systems;2018-05-15

3. Flexible diodes for radio frequency (RF) electronics: a materials perspective;Semiconductor Science and Technology;2017-10-30

4. A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology;ETRI Journal;2013-08-01

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