Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer-Reference-Cited by-同舟云学术

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

Published:2010 Issue:8 Volume:E93-C Page:1234-1237
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

HU Cheng-Yu¹,NAKATANI Katsutoshi¹,KAWAI Hiroji²,AO Jin-Ping¹,OHNO Yasuo¹

Affiliation:

1. Institute of Technology and Science, the University of Tokushima

2. Powdec K.K

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E93.C/8/E93.C_8_1234/_pdf

Reference8 articles.

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2. [2] S. Chowdhury, B.L. Swenson, and U.K. Mishra, “Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer,” IEEE Electron. Device Lett., vol.29, no.6, pp.543-545, June 2008.

3. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

4. [4] S.-J. Chang, S.-C. Wei, Y.-K. Su, C.-H. Liu, S.-C. Chen, U.-H. Liaw, T.-Y. Tsai, and T.-H. Hsu, “AlGaN/GaN modulation-doped field-effect transistors with an Mg-doped carrier confinement layer,” Jpn. J. Appl. Phys., vol.42 Part 1, no.6A, pp.3316-3319, June 2003.

5. [5] H.-C. Lee, S.-Y. Hyun, H.-I. Cho, C. Ostermaier, K.-W. Kim, S.-I. Ahn, K.-I. Na, J.-B. Ha, D.-H. Kwon, C.-K. Hahn, S.-H. Hahm, H.-C. Chol, and J.-H. Lee, “Enhanced electrical characteristics of AlGaN/GaN heterostructure field-effect transistor with p-GaN back barriers and Si delta-doped Layer,” Jpn. J. Appl. Phys., vol.47, no.4, pp.2824-2827, April 2008.