Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Author:

TAYA Jun1,KOJIMA Kazuki1,MUKUDA Tomonori1,NAKASHIMA Akihiro1,SAGAWA Yuki1,MATSUDA Tokiyoshi1,KIMURA Mutsumi1

Affiliation:

1. Ryukoku University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. [1] Y. Kuo, Thin Film Transistors, Materials and Processes, 2: Polycrystalline Silicon Thin Film Transistors, Kluwer Academic Publishers, Boston, 2004.

2. [2] W. den. Boer, Active Matrix Liquid Crystal Displays: Fundamentals and Applications. Newnes, Oxford, 2005.

3. [3] S. Morozumi, K. Oguchi, S. Yazawa, T. Kodaira, H. Ohshima, and T. Mano, “B/W and color LC video display addressed by poly-Si TFTs,” Society for Information Display, 1983 International Symposium (SID '83), Philadelphia, Digest of Technical Papers, pp.156–157, 1983.

4. [4] K. Yoneno, H. Kamakura, J. Nakamura, A. Yajima, J. Karasawa, T. Nakayama, M. Ogihara, Y. Miyazawa, S. Banda, and N. Okamoto, “High definition front projector using poly-Si TFT LCD,” International Display Research Conference 1991 (IDRC '91), San Diego, pp.147–150, Oct. 1991.

5. [5] M. Kimura, I. Yudasaka, S. Kanbe, H. Kobayashi, H. Kiguchi, S. Seki, S. Miyashita, T. Shimoda, T. Ozawa, K. Kitawada, T. Nakazawa, W. Miyazawa, and H. Ohshima, “Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display,” IEEE Trans. Electron. Dev., vol.46, no.12, pp.2282–2288, Dec. 1999.

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1. Temperature Sensing System With Flexible Electronics Using Oxide TFTs;2022 IEEE International Symposium on Circuits and Systems (ISCAS);2022-05-28

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