Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency-Reference-Cited by-同舟云学术

Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency

Published:2014 Issue:10 Volume:E97.C Page:1021-1027
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

YAMAMOTO Takao¹,MIYAKE Masataka²,FELDMANN Uwe²,JÜRGEN MATTAUSCH Hans²,MIURA-MATTAUSCH Mitiko²

Affiliation:

1. DENSO Corporation

2. Hiroshima University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E97.C/10/E97.C_1021/_pdf

Reference25 articles.

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