Peculiar Characteristics of Amplification and Noise for Intensity Modulated Light in Semiconductor Optical Amplifier

Author:

HIGUCHI Kazuki1,TAKEUCHI Nobuhito1,YAMADA Minoru1

Affiliation:

1. Kanazawa University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. [1] T. Mukai and Y. Yamamoto, “Noise in an AlGaAs semiconductor laser amplifier,” IEEE J. Quantum Electron., vol.QE-18, no.4, pp.564–575, Apr. 1982.

2. [2] T. Saitoh and T. Mukai, “1.5 μm GaInAsP traveling-wave semiconductor laser amplifier,” IEEE J. Quantum Electron., vol.QE-23, no.6, pp.1010–1020, June 1987.

3. [3] G. P. Agrawal and N. A. Olsson, “Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,” IEEE J. Quantum Electron., vol.QE-25, no.11, pp.2297–2306, Nov. 1989.

4. [4] E. Berglind and O. Nilsson, “Laser linewidth broadening caused by a laser amplifier,” IEEE Photonic. Technol. Lett., vol.3, no.5, pp.442–444, May 1991.

5. [5] S. Balsamo, F. Sartori, and I. Montrosset, “Dynamic beam propagation method for flared semiconductor power amplifiers,” IEEE J. Sel. Top. Quantum Electron., vol.2, no.2, pp.378–384, June 1996.

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