High-Power GaN HEMT T/R Switch Using Asymmetric Series-Shunt/Shunt Configuration

Author:

HANGAI Masatake1,TARUI Yukinobu1,KAMO Yoshitaka1,HIEDA Morishige1,NAKAYAMA Masatoshi1

Affiliation:

1. Mitsubishi Electric Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. [3] J. Bellanton, D. Bartle, D. Payne, G. McDermott, S. Bandla, R. Tayrani, and L. Raffaelli, “A monolithic high power Ka band PIN switch,” IEEE Microw. and Millimeter-Wave Circuits Symp., pp.47-50, June 1989.

2. [4] B.Y. Ma, K.B. Boutros, J.B. Hacker, and G. Nagy, “High power AlGaN/GaN Ku-Band MMIC SPDT switch and design consideration,” IEEE MTT-S Int. Microw. Symp. Dig., pp.1473-1476, June 2008.

3. A High-Power RF Switch IC Using AlGaN/GaN HFETs With Single-Stage Configuration

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