Design and Impact on ESD/LU Immunities by Drain-Side Super-Junction Structures in Low-(High-)Voltage MOSFETs for the Power Applications-Reference-Cited by-同舟云学术

Design and Impact on ESD/LU Immunities by Drain-Side Super-Junction Structures in Low-(High-)Voltage MOSFETs for the Power Applications

Published:2018 Issue:3 Volume:E101.C Page:143-150
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

CHEN Shen-Li¹,HUANG Yu-Ting²,CHANG Shawn³

Affiliation:

1. Dept. of Electronic Engineering, National United University

2. IP Technology Service Group, Powerchip Technology Corporation

3. Device Engineering Group, Maxchip Technology Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E101.C/3/E101.C_143/_pdf

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