Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications

Author:

YAMAMOTO Kazuya1,MIYASHITA Miyo1,MUKAI Kenji1,FUJIWARA Shigeru2,SUZUKI Satoshi1,SEKI Hiroaki1

Affiliation:

1. Mitsubishi Electric Corporation

2. MELCO Semiconductor Engineering Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. [1] K. Kobayashi, T. Iwai, H. Itoh, N. Miyazawa, Y. Sano, S. Ohara, and K. Joshin, “0.03-cc super-thin HBT-MMIC power amplifier module with novel polyimide film substrate for W-CDMA mobile handsets,” in Proc. 32rd Eur. Microw. Conf., pp.199-202, 2002. 10.1109/euma.2002.339261

2. [2] J.H. Kim, J.H. Kim, Y.S. Noh, and C.S. Park, “An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets,”IEEE J. Solid-State Circuits, vol.38, no.6, pp.905-910, June 2003. 10.1109/jssc.2003.811869

3. [3] S. Xu, D. Frey, T. Chen, A. Prejs, M. Anderson, J. Miller, T. Arell, M. Singh, R. Lertpiriyapong, A. Parish, R. Schrock, E. Demarest, A. Kini, and J. Ryan, “Design and development of compact CDMA/WCDMA power amplifier module for high yield low cost manufacturing,” in IEEE Compound Semicond. Integr. Circutis Symp. Dig., pp.49-52, 2004. 10.1109/csics.2004.1392483

4. [4] G. Hau, C. Caron, J. Turpel, and B. MacDonald, “A 20mA quiescent current 40% PAE WCDMA HBT power amplifier module with reduced current consumption under backoff power operation,” in IEEE Radio Freq. Integr. Symp. Dig., pp.243-246, 2005. 10.1109/rfic.2005.1489645

5. [5] G. Zhang, S. Chang, and Z. Alon, “A high performance balanced power amplifier and its integration into a front-end module at PCS band,” in IEEE Radio Freq. Integr. Symp. Dig., pp.251-254, 2007. 10.1109/rfic.2007.380876

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