A 60GHz Power Amplifier with 10GHz 1-dB Bandwidth and 13.6% PAE in 65nm CMOS
Author:
Affiliation:
1. Toshiba Corporation
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E96.C/6/E96.C_796/_pdf
Reference18 articles.
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2. [2] V. Vidojkovic, G. Mangraviti, K. Khalaf, V. Szortyka, K. Vaesen, W. Van Thillo, B. Parvais, M. Libois, S. Thijs, J.R. Long, C. Soens, and P. Wambacq, “A low-power 57-to-66GHz transceiver in 40nm LP CMOS with -17dB EVM at 7Gb/s,” IEEE International Solid-State Circuits Conference, pp.268-270, Feb. 2012.
3. [3] K. Okada, K. Kondou, M. Miyahara, M. Shinagawa, H. Asada, R. Minami, T. Yamaguchi, A. Musa, Y. Tsukui, Y. Asakura, S. Tamonoki, H. Yamagishi, Y. Hino, T. Sato, H. Sakaguchi, N. Shimasaki, T. Ito, Y. Takeuchi, L. Ning, B. Qinghong, R. Murakami, K. Bunsen, K. Matsushita, M. Noda, and A. Matsuzawa, “A full 4-channel 6.3Gb/s 60GHz direct-conversion transceiver with low-power analog and digital baseband circuitry,” IEEE International Solid-State Circuits Conference, pp.218-220, Feb. 2012.
4. [4] Ali M. Niknejad and H. Hashemi, mm-Wave Silicon Technology 60GHz and Beyond, Springer, 2008.
5. [5] B. Martineau, V. Knopik, A. Siligaris, F. Gianesello, and D. Belot, “A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS,” IEEE International Solid-State Circuits Conference, pp.428-429, Feb. 2010.
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