Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Author:
Affiliation:
1. Hiroshima University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E96.C/5/E96.C_744/_pdf
Reference41 articles.
1. [1] B.J. Baliga, Fundamentals of Power Semiconductor Devices, Chap. 6, Springer, New York, 2008.
2. [2] F.E. Holmes and C.A.T. Salama, “VMOS — A new MOS integrated circuit technology,” Solid-State Electron., vol.17, no.8, pp.791-797, Aug. 1974.
3. [3] C.A.T. Salama, “A new short channel MOSFET structure (UMOST),” Solid-State Electron., vol.20, no.12, pp.1003-1009, Dec. 1977.
4. [4] K.P. Lisiak and J. Berger, “Optimization of nonplanar power MOS transistors,” IEEE Trans. Electron Devices, vol.25, no.10, pp.1229-1234, Oct. 1978.
5. [5] A. Lidow, T. Herman, and H.W. Collins, “Power MOSFET technology,” IEEE Tech. Dig. Int. Electron Device Meet. (IEDM), pp.79-83, Dec. 1979.
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