Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements-Reference-Cited by-同舟云学术

Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements

Published:2015 Issue:5 Volume:E98.C Page:406-410
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

OHTA Akio¹,LIU Chong¹,ARAI Takashi¹,TAKEUCHI Daichi¹,ZHANG Hai¹,MAKIHARA Katsunori¹,MIYAZAKI Seiichi¹

Affiliation:

1. Nagoya University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E98.C/5/E98.C_406/_pdf

Reference10 articles.

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3. [3] I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, H. I. Chung, and J. T. Moon, “Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses,” Proc. of IEDM Tech. Digest., 2005, pp. 587–590.

4. [4] International Technology Roadmap for Semicondutor, 2013 Edition, Emerging Research Device.

5. [5] B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, “Resistive switching mechanism of TiO₂ thin films grown by atomic-layer deposition,” J. Appl. Phys., vol.98, no.3, pp.033715, 2005.

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