Affiliation:
1. Seoul National University
2. Gachon University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. [1] C. W. Park, C. Park, W. Y. Choi, D. Seo, C. Jeong, and I. H. Cho, “Scaling down characteristics of vertical channel phase change random access memory (VPCRAM),” J. Semicond. Technol. Sci., vol.14, no.1, pp.48–52, Feb. 2014.
2. [2] S.-D. Yang, S.-H. Kim, H.-J. Yun, K.-S. Jeong, Y.-M. Kim, J.-S. Kim, Y.-U. Ko, J.-U. An, H.-D. Lee, and G.-W. Lee, “Analysis of SOHOS flash memory with 3-level charge pumping method,” J. Semicond. Technol. Sci., vol.14, no.1, pp.34–39, Feb. 2014.
3. [3] I.-G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon, “Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses,” Tech. Dig. IEDM, pp. 587–590, Washington D.C., USA, Dec. 2004.
4. [4] K.-C. Ryoo, J.-H. Oh, S. Jung, H. Jeong, and B.-G. Park, “Areal and structural effects on oxide-based resistive random access memory cell for improving resistive switching characteristics,” Jpn. J. Appl. Phys., vol.51, no.4S, pp.04DD14-1–04DD14-5, Apr. 2012.
5. [5] J.-H. Oh, K.-C. Ryoo, S. Jung, Y. Park, and B.-G. Park, “Effect of oxidation amount on gradual switching behavior in reset transition of Al/TiO2-based resistive switching memory and its mechanism for multilevel cell operation,” Jpn. J. Appl. Phys., vol.51, no.4S, pp.04DD16-1–04DD16-5, Apr. 2012.
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