DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication-Reference-Cited by-同舟云学术

DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication

Published:2012 Issue:8 Volume:E95.C Page:1348-1353
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

JIN Chong¹,PAVLIDIS Dimitris¹,CONSIDINE Laurence¹

Affiliation:

1. Institute of Electronics, Microelectronics and Nanotechnology, (IEMN)

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E95.C/8/E95.C_1348/_pdf

Reference11 articles.

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2. [2] Y. Kwon, D. Pavlidis, P. Marsh, M. Tutt, G.I. Ng, and T. Brock, “180GHz InAlAs/InGaAs HEMT monolithic integrated frequency doubler,” Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual, vol., no., pp.165-168, Oct. 1991.

3. [3] Y. Kwon, D. Pavlidis, P. Marsh, G.-I. Ng, and T.L. Brock, “Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band,” IEEE Trans. Microw. Theory Tech., vol.41, no.1, pp.1-8, Jan. 1993.

4. [4] O. Yilmazoglu, K. Mutamba, D. Pavlidis, and T. Karaduman, “Measured negative differential resistivity for GaN Gunn diodes on GaN substrate,” Electron. Lett., vol.43, no.8, pp.480-482, April 2007.

5. [5] D. Pavlidis and L. Considine, “A novel GaN-based high frequency varactor diode,” Microwave Integrated Circuits Conference (EuMIC), 2010 European, pp.118-121, Sept. 2010.

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