Prediction of DC-AC Converter Efficiency Degradation due to Device Aging Using a Compact MOSFET-Aging Model
Author:
Affiliation:
1. Graduate School of Advanced Sciences of Matter, Hiroshima University
2. HiSIM Research Center, Hiroshima University
3. Graduate School of Engineering, Hiroshima University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E103.C/3/E103.C_2019ECP5010/_pdf
Reference28 articles.
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2. [2] R.L. Steigerwald, R.W. De Doncker, and M.H. Kheraluwala, “A comparison of high-power DC-DC soft-switched converter topologies,” IEEE Trans. Ind. Appl., vol.32, no.5, pp.1139-1145, Sept./Oct. 1996. 10.1109/28.536876
3. [3] H. Matsunami, N. Ootani, T. Kimoto, and T. Nakamura, “Technology of semiconductor SiC and its application,” The Nikkan Kogyo Shimbun, Tokyo, Japan, pp.9-22, 2011.
4. [4] K. Ino, “New era of power electronics by SiC power devices evolution,” Proc. Inter. Conf. on Planarization/CMP Technology, Kobe, Japan, p.4, 2014. 10.1109/icpt.2014.7017231
5. [5] J.D. Van Wyk and F.C. Lee, “On a future for power electronics,” IEEE Journal of Emerging and Selected Topics in Power Electron., vol.1, no.2, pp.59-72, June 2013. 10.1109/jestpe.2013.2271499
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