Silicon Based Millimeter Wave and THz ICs-Reference-Cited by-同舟云学术

Silicon Based Millimeter Wave and THz ICs

Published:2012 Issue:7 Volume:E95.C Page:1134-1140
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

CHEN Jixin¹,HONG Wei¹,TANG Hongjun¹,YAN Pinpin¹,ZHANG Li²,YANG Guangqi¹,HOU Debin¹,WU Ke³

Affiliation:

1. State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University

2. Institute of RF- & OE-ICs, School of Information Science and Engineering, Southeast University

3. Poly-Grames Research Center, Ecole Polytechnique, University of Montreal

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E95.C/7/E95.C_1134/_pdf

Reference13 articles.

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3. [3] D.Q. Huang, T.R. LaRocca, L. Samoska, A. Fung, and M.-C.F. Chang, “324GHz CMOS frequency generator using linear superposition technique,” IEEE International Solid-State Circuits Conference (ISSCC), pp.476-629, San Francisco, Feb. 2008.

4. [5] B. Afshar, Y. Wang, and A.M. Niknejad, “A robust 24mW 60GHz receiver in 90nm standard CMOS,” IEEE International Solid-State Circuits Conference (ISSCC), pp.182-183, San Francisco, Feb. 2008.

5. [6] M. Seo, B. Jagannathan, C. Carta, J. Pekarik, L. Chen, C.P. Yue, and M. Rodwell, “A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines,” IEEE International Solid-State Circuits Conference (ISSCC), pp.484-485, San Francisco, Feb. 2009.

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