Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
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Published:2012
Issue:8
Volume:E95.C
Page:1323-1326
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ISSN:0916-8524
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Container-title:IEICE Transactions on Electronics
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language:en
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Short-container-title:IEICE Trans. Electron.
Author:
YAMAGUCHI Yutaro1, SAGAI Takeshi1, MIYAMOTO Yasuyuki1
Affiliation:
1. Department of Physical Electronics, Tokyo Institute of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. [1] S. Raman, T.-H. Chang, C.L. Dohrman, and M.J. Rosker, “The DARPA COSMOS program: The convergence of InP and silicon CMOS technologies for high-performance mixed-signal,” 22nd Indium Phosphide & Related Materials (IPRM), PL2, Takamatsu, May 2010. 2. [2] M.J.W. Rodwell, M. Urteaga, T. Mathew, D. Scott, D. Mensa, Q. Lee, J. Guthrie, Y. Betser, S.C. Martin, R.P. Smith, S. Jaganathan, S. Krishnan, S.I. Long, R. Pullela, B. Agarwal, U. Bhattacharya, L. Samoska, and M. Dahlstrom, “Submicron scaling of HBTs,” IEEE Trans. Electron Devices, vol.48, no.11, pp.2606-2624, Nov. 2001. 3. [3] Y. Miyamoto, S. Takahashi, T. Kobayashi, H. Suzuki, and K. Furuya, “Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector,” IEICE Trans. Electron., vol.E93-C, no.5, pp.644-647, May 2010. 4. [4] M. Dahlström, X.-M. Fang, D. Lubyshev, M. Urteaga, S. Krishnan, N. Parthasarathy, Y.M. Kim, Y. Wu, J.M. Fastenau, W.K. Liu, and M.J.W. Rodwell, “Wideband DHBTs using a graded carbon-doped InGaAs base,” IEEE Electron Device Lett., vol.24, no.7, pp.433-435, July 2003. 5. [5] T. Kraemer, C. Meliani, F.J. Schmueckle, J. Wuerfl, and G. Traenkle, “Traveling-Wave amplifiers in transferred substrate InP-HBT technology,” IEEE Trans. Microw. Theory Tech., vol.57, no.9, pp.2114-2121, Sept. 2009.
Cited by
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