Experimental Demonstration of a Hard-Type Oscillator Using a Resonant Tunneling Diode and Its Comparison with a Soft-Type Oscillator
Author:
Affiliation:
1. Faculty of Engineering, University of Toyama
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E104.C/12/E104.C_2021ECS6002/_pdf
Reference31 articles.
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3. [3] M. Fujishima, S. Amakawa, K. Tkano, K. Katayama, and T. Yoshida, “Terahertz CMOS design for low-power and high-speed wireless communication,” IEICE Trans. Electron., vol.E98-C, pp.1091-1104, Dec. 2015. 10.1587/transele.E98.C.1091
4. [4] S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, and H. Yokoyama, “Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature,” Appl. Phys. Lett., vol.97, p.242102, Dec. 2010. 10.1063/1.3525834
5. [5] M. Feiginov, C. Sydlo, O. Cojocari, and P. Meissner, “Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz,” Appl. Phys. Lett., vol.99, p.233506, Dec. 2011. 10.1063/1.3667191
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