10-Gb/s Optical Buffer Memory Using a Polarization Bistable VCSEL-Reference-Cited by-同舟云学术

10-Gb/s Optical Buffer Memory Using a Polarization Bistable VCSEL

Published:2009 Issue:7 Volume:E92-C Page:957-963
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

MORI Takashi¹²,SATO Yuuki¹,KAWAGUCHI Hitoshi¹²

Affiliation:

1. CREST, Japan Science and Technology Agency

2. Graduate School of Materials Science, Nara Institute of Science and Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E92.C/7/E92.C_7_957/_pdf

Reference21 articles.

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3. [3] S. Zhang, Y. Liu, D. Lenstra, M.T. Hill, H. Ju, G.D. Khoe, and H.J.S. Dorren, “Ring-laser optical flip flop memory with single active element, ” IEEE J. Sel. Top. Quantum Electron., vol.10, no.5, pp.1093-1100, Sept./Oct. 2004.

4. Optical injection induced polarization bistability in vertical‐cavity surface‐emitting lasers

5. [5] H. Kawaguchi, “Bistable laser diodes and their applications: State of the art, ” IEEE J. Sel. Top. Quantum Electron., vol.3, no.5, pp.1254-1270, Oct. 1997.

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