Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices-Reference-Cited by-同舟云学术

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Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices

Published:2017 Issue:5 Volume:E100.C Page:439-445
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

CHO Doohyung¹,PARK Kunsik¹,WON Jongil¹,KIM Sanggi¹,KIM Kwansgsoo²

Affiliation:

1. Electronics and Telecommunications Research Institute

2. Sogang University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E100.C/5/E100.C_439/_pdf

Reference21 articles.

1. [1] B.J. Baliga, Fundamentals of Power Semiconductor Devices, Springer, New York, 2008.

2. [2] R. Perez, D. Tournier, A. Perez-Tomas, P. Godignon, N. Mestres, and J. Millan, “Planar Edge Termination Design and Technology Considerations for 1.7-kV 4H-SiC PiN Diodes,” IEEE Trans. Electron Devices, vol.52, no.10, pp.2309-2316, Oct. 2005.

3. [3] M.C. Tarplee, V.P. Madangarli, Q. Zhang, and T.S. Sudardhan, “Design Rules for Field Plate Edge Termination in SiC Schottky Diodes,” IEEE Trans. Electron Devices, vol.48, no.12, pp.2659-2664, Dec. 2001.

4. [4] D.C. Sheridan, G. Niu, J.N. Merrett, J.D. Cressler, C. Ellis, and C.-C. Tin, “Design and fabrication of planar guard ring termination for high-voltage SiC diodes,” Solid State Electron, vol.44, no.8, pp.1367-1372, Aug. 2000.

5. [5] X. Wang and J.A. Cooper, Jr, “Optimization of JTE Edge Terminations for 10kV Power Devices in 4H-SiC,” Mater. Sci. For., vol.457-460, pp.1257-1262, 2004.

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