Past and Future Technology for Mixed Signal LSI-Reference-Cited by-同舟云学术

Past and Future Technology for Mixed Signal LSI

Published:2014 Issue:4 Volume:E97.C Page:238-244
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

HATASAKO Kenichi¹,NITTA Tetsuya¹,HANE Masami²,MAEGAWA Shigeto¹

Affiliation:

1. Mixed Signal Device Tech. Dept., Renesas Electronics Corp.

2. Advanced LSI Devices Research, Renesas Electronics Corp.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E97.C/4/E97.C_238/_pdf

Reference15 articles.

1. [1] Y. Sugawara, “Chapter8 power IC,” in Handbook of Power device/Power IC, pp.187-247, Korona-sha, Tokyo, 1996. (in Japanese)

2. [2] C. Contiero, P. Galbiati, M. Palmieri, G. Ricotti, and R. Stellaand, “Smart power approaches VLSI complexity,” Proc. 10th ISPSD, pp.11-16, Kyoto, Japan, June 1998.

3. [3] C. SZÁSZ: “Development strategy of next generation single chip smart inverters for motor control applications,” Proc. Mediterranean Conf. on Control and Automation, no.T28-006, pp.1-5, Athens, July 2007.

4. [4] T. Segawa, “Digital control merit for power electronics,” Transistor Technology, vol.46, no.9, pp.63-153, 2009. (in Japanese)

5. [5] T. Terashima, F. Yamamoto, and K. Hatasako, “Multi-voltage device integration technique for 0.5µm BiCMOS & DMOS process,” Proc. 12th ISPSD, pp.331-334, Toulouse, France, May 2000.

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