Affiliation:
1. National Institute of Information and Communications Technology
2. Hiroshima University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. [1] C.-L. Ko, C.-H. Li, C.-N. Kuo, M.-C.Kuo, and D.-C. Chang, “A 210-GHz amplifier in 40-nm digital CMOS technology,” IEEE Trans. Microwave Theory Tech., vol.61, no.6, pp.2438-2446, June 2013.
2. [2] Z.-M. Tsai, H.-C. Liao, Y.-H. Hsiao, H. Wang, J.Y.-C. Liu, M.-C.F. Chang, Y.-M. Teng, and G.-W. Huang, “A 1.2V broadband D-band amplifier with 13.2-dBm output power in standard 65-nm CMOS,” Proc. 2012 IEEE MTT-S International Microwave Symposium Digest (IMS), pp.1-3, June 2012.
3. [3] P.-H. Chen, J.-C. Kao, T.-L. Yu; Y.-W. Hsu, Y.-M. Teng, G.-W. Huang, and H. Wang, “A 110-180 GHz broadband amplifier in 65-nm CMOS process,” Proc. 2013 IEEE MTT-S International Microwave Symposium Digest (IMS), pp.1-3, June 2013.
4. [4] S. Hara, K. Katayama, K. Takano, I. Watanabe, N. Sekine, A. Kasamatsu, T. Yoshida, S. Amakawa, and M. Fujishima, “Compact 160-GHz Amplifier with 15-dB Peak Gain and 41-GHz 3-dB Bandwidth,” Proc. 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp.7-10, May 2015.
5. [5] Z. Xu, Q.J. Gu, and M.-C.F. Chang, “A three stage, fully differential 128-157 GHz CMOS amplifier with wide band matching,” IEEE Micorwave Wireless Compon. Lett., vol.21, no.10, pp.550-552, Oct. 2011.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献