Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies
Author:
Affiliation:
1. Graduate School of Science and Technology, Kyoto Institute of Technology
2. Dolphin Design
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/transele/E107.C/7/E107.C_2023CDP0004/_pdf
Reference31 articles.
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2. [2] M. Hifumi, H. Maruoka, S. Umehara, K. Yamada, J. Furuta, and K. Kobayashi, “Influence of layout structures to soft errors caused by higher-energy particles on 28/65 nm fdsoi flip-flops,” 2017 IEEE International Reliability Physics Symposium (IRPS), pp.SE-5.1-SE-5.4, 2017. 10.1109/irps.2017.7936406
3. [3] D. Kobayashi, K. Hirose, H. Ikeda, and H. Saito, “Radiation-induced pulse noise in soi cmos logic,” Int'l Symposium on Advanced Semiconductor-on-insulator Technology and Related Physics (in 219th ECS Meeting), vol.MA2011-01, no.23, p.1442, May 2011. 10.1149/ma2011-01/23/1442
4. [4] M. Raine, M. Gaillardin, T. Lagutere, O. Duhamel, and P. Paillet, “Estimation of the single-event upset sensitivity of advanced SOI SRAMs,” IEEE Trans. Nucl. Sci., vol.65, no.1, pp.339-345, Jan. 2018. 10.1109/tns.2017.2779786
5. [5] D.G. Mavis and P.H. Eaton, “Soft error rate mitigation techniques for modern microcircuits,” 2002 IEEE International Reliability Physics Symposium, Proc. 40th Annual (Cat. No.02CH37320), pp.216-225, 2002. 10.1109/relphy.2002.996639
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