High-Power Protection Switch Using Stub/Line Selectable Circuits-Reference-Cited by-同舟云学术

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High-Power Protection Switch Using Stub/Line Selectable Circuits

Published:2011 Issue:5 Volume:E94-C Page:814-819
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

HANGAI Masatake¹,NAKAHARA Kazuhiko²,YAMAGUCHI Mamiko³,HIEDA Morishige¹

Affiliation:

1. Information Technology Research and Development Center, Mitsubishi Electric Corporation

2. Kamakura Works, Mitsubishi Electric Corporation

3. High Frequency & Optical Device Works, Mitsubishi Electric Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_814/_pdf

Reference8 articles.

1. [1] G.L. Lan, D.L. Dunn, J.C. Chen, C.K. Pao, and D.C. Wang, “A high performance V-band monolithic FET transmit-receive switch,” IEEE Microwave and Millimeter-Wave Circuits Symp., pp.99-101, 1988.

2. DC-110-GHz MMIC traveling-wave switch

3. [3] P. Bernkopf, M. Schindler, and A. Bertrand, “A high power K/Ka-band monolithic T/R switch,” IEEE Microwave and Millimeter-Wave Circuits Symp., pp.15-18, 1991.

4. [4] M. Schindler and A. Morris, “DC-40GHz and 20-40GHz MMIC SPDT switches,” IEEE Trans. Microw. Theory Tech., vol.35, no.12, pp.1486-1493, Dec. 1987.

5. [5] M. Hangai, T. Nishino, M. Hieda, K. Endo, and M. Miyazaki, “Millimeter-Wave High-Power MMIC Switch with Multiple FET Resonators,” IEICE Trans. Electron., vol.E90-C, no.9, pp.1695-1701, Sept. 2007.

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