A 6–18 GHz 6-bit active phase shifter in 0.13-µm SiGe BiCMOS-Reference-Cited by-同舟云学术

A 6–18 GHz 6-bit active phase shifter in 0.13-µm SiGe BiCMOS

Published:2019 Issue:10 Volume:16 Page:20190233-20190233
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Luo Lei¹²,Li Zhiqun¹²,Yao Yan¹²,Cheng Guoxiao¹²

Affiliation:

1. Institute of RF-& OE-ICs, Southeast University

2. Engineering Research Center of RF-ICs and RF-Systems, Ministry of Education

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/16/10/16_16.20190233/_pdf

Reference31 articles.

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2. [2] Z. D. Jiang, et al.: “A CMOS Ku-band receiver chain for phased array system,” IEICE Electron. Express 15 (2018) 20180888 (DOI: 10.1587/elex.15.20180888).

3. [3] Y. Gong, et al.: “A bi-directional, X-band 6-bit phase shifter for phased array antennas using an active DPDT switch,” IEEE Radio Frequency Integrated Circuits Symposium (2017) 288 (DOI: 10.1109/RFIC.2017.7969074).

4. [4] D.-H. Shin, et al.: “Compact Ku-band GaAs multifunction chip for SATCOM phased arrays,” 2015 European Microwave Conference (EuMC) (2015) 1471 (DOI: 10.1109/EuMC.2015.7346052).

5. [5] T. Yu and G. M. Rebeiz: “A 24 GHz 6-bit CMOS phased-array receiver,” IEEE Microw. Compon. Lett. 18 (2008) 422 (DOI: 10.1109/LMWC.2008.922714).

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