Novel method to optimize the column random telegraph signal performance in CMOS image sensor

Author:

Liu Pengyu12,Xu He1,Yi Mengyun1,Zhang Sheng12

Affiliation:

1. Shenzhen Graduate School Tsinghua University

2. Institute of Microelectronics Tsinghua University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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2. [2] Al. L. Efros and M. Rosen: “Random telegraph signal in the photoluminescence intensity of a single quantum dot,” Phys. Rev. Lett. 78 (1997) 1110 (DOI: 10.1103/PhysRevLett.78.1110).

3. [3] E. Prati, et al.: “Effect of the triplet state on the random telegraph signal in Si n-MOSFETs,” Phys. Rev. B 74 (2006) 033309 (DOI: 10.1103/PhysRevB.74.033309).

4. [4] E. Prati, et al.: “Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors,” J. Appl. Phys. 103 (2008) 123707 (DOI: 10.1063/1.2939272).

5. [5] H. Wang, et al.: “A physical model of electron trapping/detrapping in electrically stressed oxide,” IEICE Electron. Express 14 (2017) 20170565 (DOI: 10.1587/elex.14.20170565).

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