Upset and damage mechanisms of the three-dimensional silicon device induced by high power microwave interference-Reference-Cited by-同舟云学术

Upset and damage mechanisms of the three-dimensional silicon device induced by high power microwave interference

Published:2019 Issue:19 Volume:16 Page:20190498-20190498
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Li Yang¹,Chai Changchun¹,Liu Yuqian¹,Li Yun¹,Wu Han¹,Zhang Wei¹,Li Fuxing¹,Yang Yintang¹

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/16/19/16_16.20190498/_pdf

Reference30 articles.

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2. [2] G. V. Rao, et al.: “Electromagnetic interference by high power microwaves,” International Conference on Electromagnetic Interference and Compatibility (2002) (DOI: 10.1109/ICEMIC.2002.1006455).

3. [3] R. Przesmycki and M. Wnuk: “Susceptibility of IT devices to HPM pulse,” Safety and Security Eng. 8 (2018) 223 (DOI: 10.2495/SAFE-V8-N2-223-233).

4. [4] H.-L. You, et al.: “Research on CMOS inverter latch-up triggered by nMOS channel capacitance under HPM interference,” IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (2012) (DOI: 10.1109/ICSICT.2012.6467736).

5. [5] I. Kohlberg: “A stochastic process and chaos interpretation of HPE and HPM effects on electronic systems,” Asia-Pacific International Symposium on Electromagnetic Compatibility (2010) (DOI: 10.1109/APEMC.2010.5475483).

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