A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor-Reference-Cited by-同舟云学术

A novel snapback-free reverse-conducting (RC) SOI-LIGBT with a built-in thyristor

Published:2019 Issue:24 Volume:16 Page:20190626-20190626
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Lin Jingjie¹,Li Ping²,Cheng Junji¹,Wu Jiayu¹,Yi Bo¹,Chen Xingbi¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

2. Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/16/24/16_16.20190626/_pdf

Reference30 articles.

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3. [3] T. Terashima, et al.: “A novel driving technology for a passive gate on a lateral-IGBT,” Proc. ISPSD (2009) 45 (DOI: 10.1109/ISPSD.2009.5157997).

4. [4] T. Sun, et al.: “A carrier stored SOI LIGBT with ultralow ON-state voltage and high current capability,” IEEE Trans. Electron Devices 65 (2018) 3365 (DOI: 10.1109/TED.2018.2848468).

5. [5] K. Hara, et al.: “600 V single chip inverter IC with new SOI technology,” Proc. ISPSD (2014) 418 (DOI: 10.1109/ISPSD.2014.6856065).

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