A novel sense amplifier to mitigate the impact of NBTI and PVT variations for STT-MRAM

Author:

Zhang Li1,Liu Liwen1,Zhuang Yiqi1,Tang Hualian1,Xu Beilei1,Bao Junlin1,Wu Hongjiang1

Affiliation:

1. School of Microelectronic, Xidian University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

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2. [2] S. Yuasa, et al.: “Future prospects of MRAM technologies,” IEEE IEDM (2013) 3.1 (DOI: 10.1109/IEDM.2013.6724549).

3. [3] Z. Wang, et al.: “High-density NAND-like spin transfer torque memory with spin orbit torque erase operation,” IEEE Electron Device Lett. 39 (2018) 343 (DOI: 10.1109/LED.2018.2795039).

4. [4] M. Wang, et al.: “Current-induced magnetization switching in atom thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magneto-resistance,” Nat. Commun. 9 (2018) 671 (DOI: 10.1038/s41467-018-03140-z).

5. [5] W. Zhao, et al.: “High speed, high stability and low power sensing amplifier for MTJ/CMOS hybrid logic circuits,” IEEE Trans. Magn. 45 (2009) 3784 (DOI: 10.1109/TMAG.2009.2024325).

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