A Mathematical Design Approach for Spintronic Devices:
Author:
Affiliation:
1. Graduate School of Information Sciences, Hiroshima City University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
General Earth and Planetary Sciences,General Environmental Science
Link
https://www.jstage.jst.go.jp/article/essfr/9/3/9_238/_pdf
Reference34 articles.
1. (9)H. Hase, H. Sekiya, J. Lu, and T. Yahagi, “Novel design procedure for MOSFET class E oscillator,” IEICE Trans. Fundamentals, vol. E87-A, no. 9, pp. 2241-2247, Sept. 2004.
2. (10)T. Asai, A. Adamatzky, and Y. Amemiya, “Towards reaction-diffusion computing devices based on minority-carrier transport in semiconductors,” Chaos, Solitons & Fractals, vol. 20, no. 4, pp. 863-876, 2004.
3. (11)A. Adamatzky, B. D. L. Costello, and T. Asai, Reaction-Diffusion Computers, Elsevier, 2005.
4. (12)T. Asai, Y. Kanazawa, and Y. Amemiya, “A subthreshold MOS neuron circuit based on the Volterra system,” IEEE Trans. Neural Netw.,vol. 14, no. 5,pp. 1308-1312, 2003.
5. (13)T. Kohno and K. Aihara, “A MOSFET-based model of a class 2 nerve membrane,” IEEE Trans. Neural Netw., vol. 16, no. 3, pp. 754-773, 2005.
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