Silicon neuron transistor based on CMOS negative differential resistance (NDR)-Reference-Cited by-同舟云学术

Silicon neuron transistor based on CMOS negative differential resistance (NDR)

Published:2020-12-25 Issue:24 Volume:17 Page:20200316-20200316
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Zhao Fan¹,Jia Cong¹,Guo Weilian²,Xie Sheng²,Chen Yan³,Tee Clarence Augustine T. H⁴,Huo Dongquan¹,Chang Yanyan²,Jiang Huaiyan²

Affiliation:

1. School of Electrical and Information Engineering, Tianjin University

2. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University

3. College of Physics, Hebei Normal University

4. Department of Electrical Engineering, Faculty of Engineering, University of Malaya

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/24/17_17.20200316/_pdf

Reference37 articles.

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