Research on the influences of well structure on dose rate effects in 65nm CMOS circuit-Reference-Cited by-同舟云学术

Research on the influences of well structure on dose rate effects in 65nm CMOS circuit

Published:2020-07-25 Issue:14 Volume:17 Page:20200205-20200205
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

CHEN Qian¹²,HAN Jianwei¹²,MA Yingqi¹²,LI Sai¹²,LIU Jingtian³,CHI Yaqing³,LIANG Bin³

Affiliation:

1. National Space Science Center, Chinese Academy of Sciences

2. University of Chinese Academy of Sciences

3. National University of Defense Technology, Changsha

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/14/17_17.20200205/_pdf

Reference32 articles.

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2. [2] J.L. Wirth and S.C. Rogers: “The transient response of transistors and diodes to ionizing radiation,” IEEE Trans. Nucl. Sci. 11 (1964) 24 (DOI: 10.1109/TNS2.1964.4315472).

3. [3] C.W. Gwyn, et al.: “The analysis of radiation effects in semiconductor junction devices,” IEEE Trans. Nucl. Sci. 14 (1967) 153 (DOI: 10.1109/TNS.1967.4324787).

4. [4] C.W. Gwyn: “An analysis of ionizing radiation effects in four-layer semiconductor devices,” IEEE Trans. Nucl. Sci. 16 (1969) 104 (DOI: 10.1109/tns.1969.4325511).

5. [5] D.C. Sullivan: “Transient radiation-induced response of MOS field effect transistors,” IEEE Trans. Nucl. Sci. 12 (1965) 31 (DOI: 10.1109/TNS.1965.4323920).

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