Recent trends and future prospective on millimeter-wave CMOS circuits

Author:

Fujishima Minoru1

Affiliation:

1. School of Engineering, The University of Tokyo

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. [1] M. Fujishima, “Millimeter-Wave CMOS Circuits, ” IEICE General Conference, CT-1-3, SS-14-15, 2007 (in Japanese).

2. A chip-scale packaging technology for 60-GHz wireless chipsets

3. [3] E. Johnson, “Physical limitations on frequency and power parameters of transistors, ” IRE International Convention Record, vol. 13, pp. 27-34, 1965.

4. [4] S. Subbanna, G. Freeman, J. S. Rieh, D. Ahlgren, K. Stein, C. Dickey, J. Mecke, P. Bacon, R. Groves, M. Meghelli, M. Soyuer, B. Jagannathan, K. Schonenberg, S. J. Jeng, A. Joseph, D. Coolbaugh, R. Volant, D. Greenberg, H. Chen, K. Brelsford, D. Harame, J. Dunn, L. Larson, D. Herman Jr., and B. Meyerson, “50-200GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs, ” Jpn. J. Appl. Phys., vol. 41, no. 2B, pp. 1111-1123, 2002.

5. [5] T. LaRocca and M.-C. F. Chang, “60GHz CMOS differential and transformer-coupled power amplifier for compact design, ” IEEE RFIC Symposium, pp. 65-68, 2008.

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