3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE
Author:
Affiliation:
1. The Scientific and Technological Research Council of Turkey
2. Department of Electrical-Electronics Engineering of Istanbul Technical University
3. Department of Electrical-Electronics Engineering of Istanbul University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/10/5/10_10.20130104/_pdf
Reference7 articles.
1. [1] S. C. Cripps, RF Power Amplifier for Wireless Communications, 2nd ed., Artech Houce, Norwood, 2006.
2. [2] O. Kizilbey and O. Palamutcuogullari, “Design of 3.3-3.7GHz GaN HEMT balanced class E power amplifier,” 7th Int. Conf. Electrical and Electronics Engineering, pp. 350-352, Dec. 2011.
3. [3] Y. S. Lee, M. W. Lee, and Y. H. Jeong, “A 40-W balanced GaN HEMT class-E power amplifier with 71% efficiency for WCDMA base station,” Wiley Microwave and Optical Technology Letters, vol. 51, no. 3, pp. 842-845, March 2009.
4. [4] P. Saad, C. Fager, H. Nemati, H. Cao, H. Zirath, and K. Andersson, “A Highly Efficient 3.5GHz Inverse Class-F GaN HEMT Power Amplifier,” Int. J. Microwave and Wireless Technologies, vol. 2, no. 3-4, pp. 317-324, Aug. 2010.
5. [5] M. W. Lee, Y. S. Lee, and Y. H. Jeong, “A High-Efficiency GaN HEMT Hybrid Class-E Power Amplifier for 3.5GHz WiMAX Applications,” 38th Eur. Microw. Conf., pp. 436-439, Oct. 2008.
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